PART |
Description |
Maker |
2SD2397 2SD1866 2SD2143 2SD2212 |
Medium Power Transistor(Motor, Relay drive) (60±10V, 2A) Medium Power Transistor(Motor, Relay drive) (60【10V, 2A)
|
ROHM[Rohm]
|
2SD214309 2SD1866TV2 |
Medium Power Transistor (Motor, Relay drive) (60隆戮10V, 2A) Medium Power Transistor (Motor, Relay drive) (60±10V, 2A) 2000 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Rohm
|
IRG4RC10SD IRG4RC10SDTR IRG4RC10SDTRL IRG4RC10SDTR |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.10V,@和VGE \u003d 15V的,集成电路\u003d 2.0安培 600V DC-1 kHz (Standard) Copack IGBT in a D-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
FZT1047A-16 |
10V NPN MEDIUM POWER HIGH GAIN TRANSISTOR
|
Diodes Incorporated
|
55GN01MA 55GN01MA-TL-E |
RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single MCP
|
ON Semiconductor
|
REF01CJ REF01CS REF01AJ REF01AZ REF01HJ REF01HP RE |
10V Precision Viltage Reference 10V Precision Voltage Reference DL CENTER MTG POL POST 4 POST 10V Precision Viltage Reference 10V的精密Viltage参 10V Precision Viltage Reference 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 10 V, MBCY8 10 V Precision Voltage Reference
|
AD[Analog Devices] Analog Devices, Inc.
|
IRG4BC30W-S IRG4BC30WS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
KO3404 |
VDS (V) = 30V ID =5.8 A (VGS=10V) RDS(ON) 28 m (VGS = 10V)
|
TY Semiconductor Co., Ltd
|
KDB3652 |
rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V
|
TY Semiconductor Co., L...
|
EFA024A |
6-10V low distortion GaAs power FET
|
Excelics Semiconductor, Inc.
|
KDD2572 |
rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A Qg(tot) = 26nC (Typ.), VGS = 10V
|
TY Semiconductor Co., Ltd
|